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Hemocompatibility of surface-modified, silicon-incorporated, diamond-like carbon films

Paper ID Volume ID Publish Year Pages File Format Full-Text
2364 109 2009 8 PDF Available
Title
Hemocompatibility of surface-modified, silicon-incorporated, diamond-like carbon films
Abstract

The hemocompatibility of plasma-treated, silicon-incorporated, diamond-like carbon (Si-DLC) films was investigated. Si-DLC films with a Si concentration of 2 at.% were prepared on Si (100) or Nitinol substrates using a capacitively coupled radiofrequency plasma-assisted chemical vapor deposition method using a mixed gas of benzene (C6H6) and diluted silane (SiH4:H2 = 10:90). The Si-DLC films were then treated with O2, CF4 or N2 glow discharge for surface modification. The plasma treatment revealed an intimate relationship between the polar component of the surface energy and its hemocompatibility. All in vitro characterizations, i.e. protein absorption behavior, activated partial thromboplastin time measurement and platelet adhesion behavior, showed improved hemocompatibility of the N2-- or O2-plasma-treated surfaces where the polar component of the surface energy was significantly increased. Si–O or Si–N surface bonds played an important role in improving hemocompatibility, as observed in a model experiment. These results support the importance of a negatively charged polar component of the surface in inhibiting fibrinogen adsorption and platelet adhesion.

Keywords
Diamond-like carbon; Surface treatment; Hemocompatibility; Polar component; Platelet adhesion
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Hemocompatibility of surface-modified, silicon-incorporated, diamond-like carbon films
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Publisher
Database: Elsevier - ScienceDirect
Journal: Acta Biomaterialia - Volume 5, Issue 1, January 2009, Pages 249–256
Authors
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Subjects
Physical Sciences and Engineering Chemical Engineering Bioengineering
Get Full-Text Now
Don't Miss Today's Special Offer
Price was $35.95
You save - $31
Price after discount Only $4.95
100% Money Back Guarantee
Full-text PDF Download
Online Support
Any Questions? feel free to contact us