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Synthesis of isotopically controlled metal-catalyzed silicon nanowires

Paper ID Volume ID Publish Year Pages File Format Full-Text
32376 44925 2009 6 PDF Available
Title
Synthesis of isotopically controlled metal-catalyzed silicon nanowires
Abstract

SummaryThis work demonstrates the growth of isotopically controlled silicon nanowires by the vapor–liquid–solid mechanism. The growth is accomplished by using silane precursors 28SiH4, 29SiH4, and 30SiH4 synthesized from SiF4 isotopically enriched in a centrifugal setup. We grew monoisotopic 28Si, 29Si, and 30Si nanowires with isotopic purity of 99.99%, 99.9%, and 99.9%, respectively. The properties of Si–Si LO phonons of individual monoisotopic nanowires attached to silicon substrate are presented. The control of the isotopic composition of silicon on the nanoscale creates new opportunities to improve our understanding of the fundamental properties of nanowire-based devices.

Keywords
Nanowires; Semiconductor; Stable isotopes; Metal-catalyzed growth; Epitaxy; Chemical vapor deposition
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Synthesis of isotopically controlled metal-catalyzed silicon nanowires
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Publisher
Database: Elsevier - ScienceDirect
Journal: - Volume 4, Issue 5, October 2009, Pages 393–398
Authors
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Subjects
Physical Sciences and Engineering Chemical Engineering Bioengineering
Get Full-Text Now
Don't Miss Today's Special Offer
Price was $35.95
You save - $31
Price after discount Only $4.95
100% Money Back Guarantee
Full-text PDF Download
Online Support
Any Questions? feel free to contact us