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Advances in the synthesis of InAs and GaAs nanowires for electronic applications

Paper ID Volume ID Publish Year Pages File Format Full-Text
32741 44942 2009 12 PDF Available
Title
Advances in the synthesis of InAs and GaAs nanowires for electronic applications
Abstract

SummaryNew materials and device concepts are in great demand for continual (opto)electronic device scaling and performance enhancement. Arsenide III-V semiconductor nanowires promise novel device architectures and superior (opto)electronic properties. Recent insights into the growth and optimal control over the InAs and GaAs nanowire morphology and distinguished key physical aspects in their growth are discussed. Direct correlation of individual nanowire crystal structure with their electronic transport properties is also presented.

Keywords
Nanowire; III–V; Electronics; Optoelectronics
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Advances in the synthesis of InAs and GaAs nanowires for electronic applications
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Publisher
Database: Elsevier - ScienceDirect
Journal: - Volume 4, Issue 4, August 2009, Pages 347–358
Authors
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Subjects
Physical Sciences and Engineering Chemical Engineering Bioengineering
Get Full-Text Now
Don't Miss Today's Special Offer
Price was $35.95
You save - $31
Price after discount Only $4.95
100% Money Back Guarantee
Full-text PDF Download
Online Support
Any Questions? feel free to contact us