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CO oxidation on rough Au thin films grown on Si wafer

Paper ID Volume ID Publish Year Pages File Format Full-Text
42900 45945 2008 5 PDF Available
Title
CO oxidation on rough Au thin films grown on Si wafer
Abstract

The CO oxidation reactivity of rough Au thin films containing ∼5% W was investigated. At room temperature, no CO oxidation could be detected under our experimental conditions, whereas conversion of CO to CO2 was observed at 160 °C. At higher temperatures, the initial reactivity increased. However, with increasing reaction time, it was evident that deactivation of the catalytically active sites was more facile at higher temperatures. Temperature-programmed desorption (TPD) suggested that the formation of strongly bound carbonate species could be responsible for the deactivation process. Based on the TPD data, we propose that decomposition of carbonate species on the surface is the rate-determining step of CO oxidation.

Graphical abstractThe CO oxidation reactivity of nanoporous Au thin films with W impurity (∼5% of Au) was studied. No CO oxidation is observed at room temperature. At 160 °C, the conversion of CO to CO2 was observed. Decomposition of the carbonate species on the surface is the rate-determining step of the CO oxidation reaction. Figure optionsDownload full-size imageDownload as PowerPoint slide

Keywords
Au; CO oxidation; Nanostructure
First Page Preview
CO oxidation on rough Au thin films grown on Si wafer
Publisher
Database: Elsevier - ScienceDirect
Journal: Applied Catalysis A: General - Volume 347, Issue 1, 1 September 2008, Pages 112–116
Authors
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Subjects
Physical Sciences and Engineering Chemical Engineering Catalysis