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Fabrication of N-doped TiO2 thin films by laser ablation method: Mechanism of N-doping and evaluation of the thin films

Paper ID Volume ID Publish Year Pages File Format Full-Text
52074 46864 2008 4 PDF Available
Title
Fabrication of N-doped TiO2 thin films by laser ablation method: Mechanism of N-doping and evaluation of the thin films
Abstract

N-doped TiO2 thin films were prepared by the laser ablation method under an N2 gas atmosphere. Properties of the films such as color, the relative amount of N doped and the crystal structure strongly depended on substrate temperature and N2 gas pressure. XPS data indicated that the amount of doped N unexpectedly increases with decreasing N2 gas pressure in the range of ca. 40–270 Pa. We proposed that the N-doping occurred when N species and TiO2 particles collide on the substrate. The decomposition of methylene blue using the N-doped TiO2 thin film was also performed under visible light irradiation.

Keywords
Laser ablation; N-doped TiO2; Thin film; Photocatalysis
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Fabrication of N-doped TiO2 thin films by laser ablation method: Mechanism of N-doping and evaluation of the thin films
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Publisher
Database: Elsevier - ScienceDirect
Journal: Catalysis Communications - Volume 9, Issue 3, 1 March 2008, Pages 437–440
Authors
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Subjects
Physical Sciences and Engineering Chemical Engineering Catalysis
Get Full-Text Now
Don't Miss Today's Special Offer
Price was $35.95
You save - $31
Price after discount Only $4.95
100% Money Back Guarantee
Full-text PDF Download
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