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Photocatalytic activity of TiO2 films on Si support prepared by atomic layer deposition

Paper ID Volume ID Publish Year Pages File Format Full-Text
53844 46987 2015 6 PDF Available
Title
Photocatalytic activity of TiO2 films on Si support prepared by atomic layer deposition
Abstract

•Deposition of TiO2 films on Si(1 0 0) surface has been achieved applying ALD.•Properties of films were tuned varying deposition temperature and number of cycles.•Photocatalytic oxidation of terephthalic acid, Azur B and herbicides was observed.•OH• is responsible for 2,4,5-T oxidation, while various ROS—for 2,4-D degradation.•Optimal deposition parameters depend on oxidation pathways involving various ROS.

TiO2 films were deposited on the native oxide covered Si(1 0 0) with ALD method. The films were grown applying various numbers of deposition cycles at different temperatures. The resulting coatings possessed different thickness, crystallinity, morphology and roughness. The photocatalytic activity of the films has been studied in the presence of terephthalic acid, Azur B and two herbicides: 2,4-dichlorophenoxyacetic acid and 2,4,5-trichlorophenoxyacetic acid. Coatings deposited at 350 °C (anatase–rutile composites) show the highest activity in the process of TA oxidation (the highest efficiency of hydroxyl radical generation). The influence of film thickness on photoactivity is more complex and depends on the mechanism of processes to be photocatalysed.

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Keywords
Atomic layer deposition (ALD); TiO2 layers; Herbicide degradation
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Photocatalytic activity of TiO2 films on Si support prepared by atomic layer deposition
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Publisher
Database: Elsevier - ScienceDirect
Journal: Catalysis Today - Volume 252, 1 September 2015, Pages 14–19
Authors
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Subjects
Physical Sciences and Engineering Chemical Engineering Catalysis
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Price was $35.95
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